Semiconductor constructions, and methods of forming semiconductor constructions

ABSTRACT

The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing iridium and tantalum. The compositions containing iridium and tantalum can be utilized as barrier materials, and in some aspects can be utilized as barriers to copper diffusion.

TECHNICAL FIELD

The invention pertains to semiconductor constructions and to methods offorming semiconductor constructions.

BACKGROUND OF THE INVENTION

It is frequently desired to utilize barrier layers in semiconductorconstructions. The barrier layers are provided to impede, and preferablyprevent, migration of various materials therethrough. For instance,copper diffusion can be a problem when utilizing copper interconnects,and accordingly barrier materials are provided proximate the copperinterconnects to preclude copper diffusion. A common copper-barriermaterial is tantalum nitride. However, it is difficult to deposit copperdirectly on tantalum nitride, and accordingly the tantalum nitride willtypically be utilized as part of a tantalum nitride/tantalum bi-layer.The tantalum of the bi-layer is provided as a material onto which coppercan be readily deposited. The tantalum is utilized in bi-layers withtantalum nitride, rather than alone, because pure tantalum is a poorbarrier to copper diffusion. Pure tantalum can containcrystallization-induced columnar textures. Copper can permeate thetantalum along boundaries between adjacent columnar grains.

It is desired to form thinner copper lines as the level of integrationincreases, and copper barrier materials create numerous difficulties ascopper line size decreases. For instance, it is typical to utilize atantalum nitride/tantalum bi-layer having a thickness of from about 75 Åto about 150 Å, and there are numerous hardware/process controlchallenges to forming the bi-layer to be less than 50 Å. Thus, thecopper diffusion barrier begins to limit the amount by which a copperline can be shrunk. Also, for barrier materials comprising tantalumthere can be a challenge in that the columnar tantalum texture cancreate difficulties in forming the film to be 25 Å or less in thickness.

There have been some attempts to utilize barrier materials other thanthe tantalum nitride/tantalum bi-layer. For instance, tantalumnitride/ruthenium has been studied as a bi-layer material forutilization with copper. The tantalum nitride is an amorphous materialwhich precludes copper diffusion, and the ruthenium is a seed materialfor growing the copper. The tantalum nitride/ruthenium bi-layer isutilized instead of a single barrier layer in that the ruthenium lackssuitable barrier properties and the tantalum nitride lacks suitableproperties for growing copper thereon. Accordingly, the tantalum nitrideis utilized as a barrier to copper diffusion and the ruthenium isutilized to provide a substrate onto which copper can be grown.

A continuing goal in semiconductor device fabrication is to decrease thedimension of circuit elements in order to increase the level ofintegration. Thus, it is desired to develop new barrier materialssuitable for alleviating copper diffusion.

Barrier materials can have other applications besides theabove-discussed applications of alleviating copper diffusion. Forinstance, barrier materials can be utilized to alleviate silicondiffusion, oxygen diffusion, and/or diffusion of numerous othermaterials.

In some applications, metal-insulator-metal (MIM) capacitors are formedover conductively-doped semiconductor pedestals (such as, for example,conductively-doped silicon pedestals). The electrode of the capacitorclosest to the conductively-doped semiconductor pedestal (i.e., thelower electrode) can comprise a noble metal or near noble metal, suchas, for example, gold, silver, platinum, palladium, etc. A diffusionbarrier material can be provided between the lower capacitor electrodeand the conductively-doped semiconductor pedestal in order to alleviate,and preferably prevent, oxygen diffusion from the high-k dielectricthrough the lower electrode and into the conductively-dopedsemiconductor. Various materials have been utilized for such barriermaterial, including, for example, tantalum nitride. However, there canbe difficulties associated with the various prior art barrier materials,and it would therefore be desirable to develop new materials which canbe utilized for barriers between a capacitor electrode and aconductively-doped semiconductor pedestal.

Persons of ordinary skill in the art will also recognize that there arenumerous other applications for barrier materials, including, forexample, between conductively-doped diffusion regions and conductiveinterconnects. It would be desirable to develop new barrier materialsthat are suitable for utilization in a wide variety of applications.

SUMMARY OF THE INVENTION

In one aspect, the invention includes a semiconductor constructioncomprising a composition that contains both Ir and Ta. In someembodiments, the composition can be provided between a copper-containingmaterial and an electrically insulative material. In other embodiments,the composition can be provided between a capacitor electrode comprisingone or more of gold, silver, palladium and platinum, and a semiconductormaterial (such as, for example, conductively-doped silicon). In yetother embodiments, the composition can be provided between a conductiveinterconnect and a conductively-doped diffusion region formed within amonocrystalline semiconductor material. The composition containing Irand Ta can, in some applications, consist essentially of iridium andtantalum. In such applications, the composition can contain the tantalumto a concentration of from about 40 atomic % to about 70 atomic %, andin exemplary applications will contain the tantalum to a concentrationof from about 50 atomic % to about 65 atomic %.

In one aspect, the invention includes a method of forming asemiconductor construction. A semiconductor substrate is provided, andsuch substrate has an electrically insulative material thereover. Acomposition containing Ir and Ta is formed over the electricallyinsulative material, and a copper-containing material is formed over thecomposition.

In one aspect, the invention includes another method of forming asemiconductor construction. A semiconductor material is provided. Afirst composition is formed over the semiconductor material, with thefirst composition comprising Ta and Ir. A second composition is formedover the first composition, with the second composition comprising oneor more of gold, silver, palladium, and platinum.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic, cross-sectional view of a semiconductor waferfragment at a preliminary processing stage of an exemplary aspect of thepresent invention.

FIG. 2 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 1.

FIG. 3 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 2.

FIG. 4 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 4.

FIG. 6 is a top view of a region of a semiconductor wafer comprising thefragment of FIG. 5. The fragment of FIG. 5 is shown along the line 5-5of FIG. 6.

FIG. 7 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent to that of FIG. 3 in accordance with a second aspect ofthe invention.

FIG. 8 is a view of the FIG. 1 wafer fragment shown at a processingstage subsequent of that of FIG. 7.

FIG. 9 is a diagrammatic, cross-sectional view of a semiconductor waferfragment shown at a preliminary processing stage of another aspect ofthe present invention.

FIG. 10 is a view of the FIG. 9 wafer fragment shown at a processingstage subsequent to that of FIG. 9.

FIG. 11 is a diagrammatic, cross-sectional view of a semiconductor waferfragment shown at a preliminary processing stage of yet another aspectof the present invention.

FIG. 12 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 11.

FIG. 13 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 12.

FIG. 14 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 13.

FIG. 15 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 12 in accordance with yet anotheraspect of the present invention.

FIG. 16 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 15.

FIG. 17 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 16.

FIG. 18 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 15 in accordance with yet anotheraspect of the present invention.

FIG. 19 is a view of the FIG. 11 wafer fragment shown at a processingstage subsequent to that of FIG. 18.

FIG. 20 is a diagrammatic, cross-sectional view of a semiconductor waferfragment at a preliminary processing stage of another exemplary aspectof the present invention.

FIG. 21 is a view of the FIG. 20 wafer fragment shown at a processingstage subsequent to that of FIG. 20.

FIG. 22 is a view of the FIG. 20 wafer fragment shown at a processingstage subsequent to that of FIG. 21.

FIG. 23 is a view of the FIG. 20 wafer fragment shown at a processingstage subsequent to that of FIG. 20 in accordance with another aspect ofthe invention.

FIG. 24 is a view of the FIG. 20 wafer fragment shown at a processingstage subsequent to that of FIG. 23.

FIG. 25 is a diagrammatic, cross-sectional view of a semiconductor waferfragment illustrating an exemplary aspect of the present invention.

FIG. 26 is a diagrammatic view of a computer illustrating an exemplaryapplication of the present invention.

FIG. 27 is a block diagram showing particular features of themotherboard of the FIG. 26 computer.

FIG. 28 is a high level block diagram of an electronic system accordingto an exemplary aspect of the present invention.

FIG. 29 is a simplified block diagram of an exemplary memory deviceaccording to an aspect of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

The invention includes methods for utilizing compositions containingiridium and tantalum in semiconductor constructions. In some aspects, athin layer (for instance, a layer having a thickness of from about 10 Åto about 200 Å, and in exemplary aspects from about 15 Å to about 50 Å)of Ir/Ta alloy is provided in amorphous form and utilized as a barrier.The layer can consist essentially of, or consist of iridium andtantalum, and can contain from about 40 atomic % to about 70 atomic %tantalum in some aspects, and in particular aspects can contain fromabout 50 atomic % to about 65 atomic % tantalum. For instance, the alloycan be Ir₄₅Ta₅₅.

The iridium/tantalum material can not only be utilized as a barriermaterial, but can also be utilized as a substrate for electroplating ofa desired metal thereover. For instance, the iridium/tantalum materialcan be utilized as a substrate for electroplating copper thereover.

The iridium/tantalum material can overcome problems associated withprior art barrier materials, such as, for example, the problemsdiscussed in the “Background” section of this disclosure regardingtantalum nitride/tantalum bi-layers and tantalum nitride/rutheniumbi-layers.

The present invention can comprise a significant departure fromconventional bi-layer barrier materials. In some aspects, the presentinvention utilizes a single material which can have suitable barrierproperties, and yet can also provide a substrate to which copper can beadhered. The single material is a composition comprising both iridiumand tantalum. Such composition can have amorphous properties whichpreclude diffusion of copper therethrough, and yet can have suitableproperties for electroplating copper directly thereon, or for retaininga copper seed onto which copper is subsequently electroplated.Iridium/tantalum alloys can have very high crystallization temperatures,which can be beneficial since the amorphous forms of the alloys willgenerally have better barrier properties than the crystalline forms. Anexemplary iridium/tantalum alloy is Ir₄₅Ta₅₅, which has acrystallization temperature of about 1010° C.

In addition to having desired barrier characteristics, and desiredcharacteristics for allowing electroplating of copper or other metallicmaterials thereon, iridium/tantalum materials can also have goodadhesion to dielectric materials, such as, for example, low-kdielectrics like borophosphosilicate glass (BPSG), phosphosilicate glass(PSG), silicon dioxide, etc.

An exemplary aspect of the invention is described with reference toFIGS. 1-6.

Referring to FIG. 1, a semiconductor wafer construction 10 isillustrated in cross-sectional view. Such construction comprises asemiconductor substrate 12 having an insulative material 14 thereover.Substrate 12 can, for example, comprise, consist essentially of, orconsist of monocrystalline silicon lightly-background doped with p-typedopant. To aid in interpretation of the claims that follow, the terms“semiconductive substrate” and “semiconductor substrate” are defined tomean any construction comprising semiconductive material, including, butnot limited to, bulk semiconductive materials such as a semiconductivewafer (either alone or in assemblies comprising other materialsthereon), and semiconductive material layers (either alone or inassemblies comprising other materials). The term “substrate” refers toany supporting structure, including, but not limited to, thesemiconductive substrates described above.

Insulative material 14 can comprise any suitable electrically insulativecomposition, including, for example, one or more of BPSG, PSG andsilicon dioxide.

Referring to FIG. 2, trenches 16 and 18 are formed into insulativematerial 14. The trenches can be formed with any suitable processing,including, for example, utilization of a photolithographically patternedphotoresist mask to define the locations of the trenches, followed byetching into the defined locations to form the trenches and subsequentremoval of the photoresist mask.

Referring to FIG. 3, a layer 20 is formed over insulative material 14and within trenches 16 and 18. Layer 20 can comprise a compositioncontaining iridium and tantalum, and in particular aspects will consistessentially of, or consist of iridium and tantalum. The layer can beformed to a thickness of from about 10 Å to about 200 Å, and inparticular aspects will be formed very thin, such as, for example, to athickness of from about 15 Å to about 50 Å, or even from about 15 Å toabout 30 Å. In aspects in which the composition of layer 20 consistsessentially of iridium and tantalum, or consists of iridium andtantalum, such composition can contain the tantalum to a concentrationof from about 40 atomic % to about 70 atomic %, and in particularaspects can contain the tantalum to a concentration to from about 50atomic % to about 65 atomic %. For instance, the composition can consistessentially of, or consist of Ir₄₅Ta₅₅.

The layer 20 can be formed utilizing any suitable processing, butpreferably will have amorphous properties, and accordingly will beformed at a temperature of less than the crystallization temperature ofthe iridium/tantalum material therein.

Referring to FIG. 4, a copper-containing material 22 is formed over thelayer 20. The copper-containing layer 22 can comprise, consistessentially of, or consist of copper.

Copper-containing material 22 can be formed over layer 20 utilizing anysuitable processing. In some aspects, the copper layer 22 can bedirectly electroplated onto the iridium/tantalum-containing material 20.In other aspects, a copper-containing seed can be first formed overlayer 20, and subsequently the layer 22 can be electroplated onto thecopper-containing seed.

In the shown aspect of the invention, copper-containing material 22 isprovided to completely fill trenches 16 and 18. It is to be understood,however, that the invention encompasses other aspects (not shown) inwhich the copper-containing material only partially fills the trenches.

The layer 20 can be considered to form a liner which completely linesthe peripheries of the trenches, and the copper-containing material 22can be considered to be formed directly on the liner. In the shownaspect of the invention, copper-containing material 22 is separated fromthe insulative material by only the liner. Thus, in the shown aspect ofthe invention the iridium/tantalum-containing composition of layer 20physically contacts both the copper-containing material 22 and theinsulative material 14.

The processing of FIGS. 1-4 can be utilized during formation of anylevel of metal layer, with various metal layer levels being typicallyreferred to as Metal I, Metal II, Metal III, etc. FIGS. 20 and 21(discussed below) illustrate a typical Metal I or Metal N (where N is aninteger greater than 1) metal level that can be formed in accordancewith some aspects of the invention.

Referring to FIG. 5, the fragment 10 is shown at a processing stagesubsequent to FIG. 4. Copper-containing material 22 andiridium/tantalum-containing layer 20 are removed from over insulativematerial 14 by planarization to form a planarized upper surface 23extending across insulative material 14, layer 20 and material 22. Theplanarization can comprise, for example, chemical-mechanical polishing.The chemical-mechanical polishing can stop on an uppermost surface oflayer 14, or can penetrate partially into layer 14.

One of the physical properties of iridium/tantalum compositions that canbe useful in exemplary aspects of the present invention is that thecompositions tend to be relatively soft. Thus, the compositions can berelatively easily removed by chemical-mechanical polishing.

FIG. 6 shows a top view of the construction of FIG. 5, and shows thatthe copper-containing material 22 and barrier layer 20 can form linesextending across a region of the semiconductor substrate. Such lines canbe considered a shape of the copper-containing material 22 at theprocessing stage of FIGS. 5 and 6, and it is to be understood that thematerial 22 can also be formed in other shapes including, for example,pedestals, pads, etc. for various applications in semiconductorconstructions.

The semiconductor construction 10 at the processing stage of FIGS. 5 and6 can correspond to any suitable level of semiconductor fabrication.Specifically, as is known to persons of ordinary skill in the art,semiconductor fabrication typically involves formation of multiplelevels of circuitry over and within a semiconductor substrate. Suchlevels of circuitry include circuit devices, and include various wiringlevels, with the wiring levels frequently being referred to as level I,level II, level III, etc. The structures 12 and 14 of FIGS. 1-6 can havevarious levels of semiconductor devices (not shown) formed therein, orcan be at a preliminary stage of semiconductor fabrication in which nolevels of circuitry have yet been formed.

Although the invention described with reference to FIGS. 1-6 has thecopper-containing material formed over layer 20 prior tochemical-mechanical polishing of layer 20, it is to be understood thatthe invention encompasses other aspects in which the chemical-mechanicalpolishing (or other planarization process) occurs before formation ofthe copper-containing material. Such aspect is described with referenceto FIGS. 7 and 8.

Referring to FIG. 7, construction 10 is shown at a processing stagesubsequent to that of FIG. 3, and specifically is shown afterchemical-mechanical polishing (or other suitable planarization) has beenutilized to remove layer 20 from over insulative material 14 and therebyform a planarized upper surface 25. The insulative material 14 can beconsidered to comprise segments 26 proximate the trenches 16 and 18, andthe planarization can be considered to remove layer 20 from over suchsegments. In some aspects, the planarization can also remove some of theinsulative material 14 associated with the segments, but regardless theplanarization has removed layer 20 from over the segments. The shownaspect of the invention forms two trenches and three segments proximatethe trenches, but it is to be understood that the invention encompassesother aspects in which other numbers of trenches and segments areformed. Generally, there will be at least one trench, and at least onesegment proximate the trench.

Referring to FIG. 8, copper-containing material 22 is formed withintrenches 16 and 18 and over layer 20. The copper-containing material 22can be formed selectively onto layer 20 by electroplating material 22onto layer 20; either directly on layer 20, or onto a copper-seed whichis provided onto layer 20 prior to the electroplating. Such forms thecopper-containing material 22 only within trenches 16 and 18, and notover the segments of insulative material 14 between the trenches.Alternatively, copper-containing material 22 can be formed by othermethods which form the copper-containing material 22 both within thetrenches and over the insulative material 14 between the trenches, andsubsequently the copper-containing material can be patterned to leavethe material only within the trenches. Such patterning can beaccomplished by planarization of the copper-containing material (forinstance, chemical-mechanical polishing), or by any other suitablemethod.

An advantage of the processing of FIGS. 1-8, relative to prior artprocessing, is that barrier layer 20 can be used both as a barrier layerand as a substrate for copper growth, and thus can replace the bi-layerconstructions traditionally utilized to provide a copper barrier and asubstrate for copper growth (for example, the tantalum nitride/tantalumbi-layers or tantalum nitride/ruthenium bi-layers). The barrier layer 20can be formed to be much thinner than bi-layer constructions, whilestill achieving the same benefits as are obtained with the bi-layerconstructions. Thus, the barrier layer 20 can be more suitable for highlevels of integration than the bi-layer constructions.

Another aspect of the invention is described with reference to FIGS. 9and 10. In referring to FIGS. 9 and 10, similar numbering will be usedas was utilized above in describing the aspect of FIGS. 1-8, whereappropriate.

Referring to FIG. 9, a semiconductor construction 50 comprises asubstrate 12. Such substrate can, for example, comprise, consistessentially of, or consist of monocrystalline silicon lightly-doped withappropriate background-type dopant.

A trenched isolation region 52 extends within the substrate. Thetrenched isolation region can comprise any suitable electricallyinsulative composition or combination of compositions, and in particularaspects will comprise, consist essentially of, or consist of silicondioxide.

A transistor device 54 is supported by substrate 12. The transistordevice comprises a transistor gate 56 and a pair of source/drain regions58 and 60.

The transistor gate 56 comprises a gate dielectric 62, a conductive gateregion 64, and an electrically insulative cap 66. The gate dielectric 62can comprise any suitable composition or combination of compositions,and in particular aspects will comprise, consist essentially of, orconsist of silicon dioxide. The conductive gate region 64 can compriseany suitable composition or combination of compositions, and inparticular aspects will comprise one or more of various metals, metalcompounds, and conductively-doped semiconductor materials (such as, forexample, conductively-doped silicon). The insulative cap 66 can compriseany suitable composition or combination of compositions, and inparticular aspects will comprise one or both of silicon dioxide andsilicon nitride.

Source/drain regions 58 and 60 are conductively-doped diffusion regionsextending into substrate 12. For instance, substrate 12 can comprisemonocrystalline silicon, and source/drain regions 58 and 60 can comprisep-type doped regions and/or n-type doped regions extending into themonocrystalline silicon.

Sidewall spacers 68 are along opposing sidewalls of gate 56. Thesidewall spacers can comprise any suitable composition or combination ofcompositions, and in particular aspects will comprise one or both ofsilicon dioxide and silicon nitride.

An electrically insulative material 70 is over substrate 12 andtransistor device 54. Insulative material 70 can comprise any suitablecomposition or combination of compositions, and in particular aspectswill comprise one or more of BPSG, PSG and silicon dioxide.

An opening extends through insulative material 70 to source/drain region60, and a conductive pedestal 72 is within such opening. Conductivepedestal 72 can comprise any suitable composition or combination ofcompositions, and in particular aspects will comprise one or more ofvarious metals, metal compounds, and conductively-doped semiconductormaterial (with an exemplary conductively-doped semiconductor materialbeing conductively-doped silicon).

A planar surface 73 extends across pedestal 72 and insulative material70. Planar surface 73 can be formed by, for example, chemical-mechanicalpolishing.

Referring to FIG. 10, a barrier layer 80 is formed over surface 73.Barrier layer 80 can comprise iridium and tantalum, and can haveidentical compositions and thicknesses as the layer 20 discussed abovewith reference to FIG. 3.

A capacitor stack 82 is formed over layer 80. The capacitor stackcomprises a first capacitor electrode 84, a dielectric material 86, anda second capacitor electrode 88. The first and second capacitorelectrodes can comprise any suitable electrically conductive material orcombination of materials, including, for example, various metals, metalcompositions, and conductively-doped semiconductor materials. Thecapacitor stack can be considered to have a first composition 84, secondcomposition 86, and third composition 88; with the first and thirdcompositions being capacitively coupled to one another.

In particular aspects, the capacitor construction 82 will correspond toa metal-insulator-metal construction, and accordingly electrodes 84 and88 will comprise various metals. Such metals can be noble metals or nearnoble metals, and in particular aspects can comprise, consistessentially of, or consist of one or more of gold, silver, platinum, andpalladium. Thus, both of the electrodes 84 and 88 can consistessentially of, or consist of platinum or palladium.

The dielectric material 86 can be any suitable composition orcombination of compositions, and in particular aspects can comprise,consist essentially of, or consist of one or more of silicon dioxide,silicon nitride, and various high-k dielectric materials (such as, forexample, tantalum oxide and aluminum oxide).

The composition 80 comprising tantalum and iridium separates thecapacitor construction 82 from the conductively-doped semiconductormaterial of pedestal 72. In the shown aspect of the invention, the lowerelectrode 84 is directly against the layer 80 comprising tantalum andiridium, and the pedestal 72 is also directly against the layer 80comprising tantalum and iridium. In exemplary aspects of the invention,the dielectric 86 can comprise a substance that can migrate throughlower electrode 84, and which is blocked by layer 80 from reachingmaterials underlying electrode 84. For instance, dielectric material 86can comprise tantalum pentoxide, lower electrode 84 can compriseplatinum, and pedestal 72 can comprise conductively-doped semiconductormaterial. In such aspects, oxygen from the tantalum pentoxide canmigrate through the platinum of layer 84. However, the iridium/tantalumcomposition of layer 80 can be a barrier to prevent such oxygen fromreaching the conductively-doped semiconductor material of pedestal 72.Thus, the tantalum/iridium composition of layer 80 can function as abarrier to prevent migration of materials from capacitor construction 82into conductively-doped semiconductor material (such as, for example,conductively-doped silicon) of pedestal 72.

An advantage of using iridium/tantalum of layer 80 as a barrier can bethat the electrode 84 can be electroplated onto material 80. Anotheradvantage of utilizing the iridium/tantalum material as a barrier isthat such can provide a thinner barrier material than prior art barriermaterials.

The transistor 54 and capacitor stack 82 can together form a dynamicrandom access memory (DRAM) unit cell. The source/drain region 58 can beconnected to a bitline 90 in some aspects of the invention so that theDRAM unit cell can be incorporated into a DRAM array.

Capacitor constructions formed utilizing methodology of the presentinvention can have numerous geometries, including, for example, theplanar geometry of FIG. 10, a pedestal configuration, or a containercapacitor geometry of the type discussed below with reference to FIG.22.

Additional aspects of the invention are discussed with reference toFIGS. 11-19. In referring to FIGS. 11-19, similar number will be used aswas utilized above in describing the aspects of FIGS. 1-6, whereappropriate.

Referring initially to FIG. 11, a semiconductor construction 100 isillustrated at a preliminary processing stage. The construction 100comprises a substrate 12 having an insulative material 14 thereover. Theconstruction also comprises a conductively-doped diffusion region 102extending into substrate 12. The conductively-doped diffusion region isan exemplary conductive node, and it is to be understood that otherconductive nodes can be provided, with other exemplary conductive nodesbeing metal-containing materials.

Referring to FIG. 12, an opening 104 is formed to extend throughinsulative material 14 and to the diffusion region 102. The opening canbe formed by any suitable processing, including, for example, formationof a photolithographically patterned photoresist mask over insulativematerial 14 to define the location of the opening, an etch throughmaterial 14 to form the opening, and subsequent removal of thephotoresist mask.

Referring to FIG. 13, a layer 106 is formed along the bottom of opening104. The layer 106 can comprise, consist essentially of, or consist ofIr/Ta, and can have a thickness and composition identical to thethicknesses and compositions discussed above for layer 20 of FIG. 3.

Referring to FIG. 14, opening 104 is filled with conductive material108. Conductive material 108 can comprise, consist essentially of, orconsist of conductively-doped semiconductor material, various metalsand/or various metal compositions. Exemplary metals that can be utilizedin material 108 are copper, noble metals and near noble metals; withexemplary noble metals and near noble metals including gold, silver,platinum and palladium. The material 108 can be referred to as a secondcomposition to distinguish such material from the first composition oflayer 106. In the shown aspect of the invention, the conductive material108 directly contacts an uppermost surface of layer 106, and layer 106directly contacts an uppermost surface of substrate 12. In particularaspects, substrate 12 can comprise, consist essentially of, or consistof monocrystalline silicon, and the layer 106 comprisingtantalum/iridium can thus be in direct physical contact with suchmonocrystalline silicon. Also, the layer 106 can be in direct physicalcontact with material 108.

The conductive material 108 can ultimately be formed into a conductivepedestal contained within opening 104 by, for example,chemical-mechanical polishing to remove layer 108 from over insulativematerial 104 while leaving the material 108 within the opening 104.Although the conductive material 108 is shown entirely filling opening104, it is to be understood that the invention encompasses other aspectsin which material 108 only partially fills opening 104.

Referring next to FIG. 15, such shows construction 100 at a processingstage subsequent to FIG. 12 in accordance with another aspect of theinvention. Specifically, the layer 106 is shown to extend over anuppermost surface of insulative material 14, as well as within opening104 and along sidewalls of the opening. The construction of FIG. 16 canbe considered to comprise segments 110 of insulative material 14proximate opening 104, and to comprise Ir/Ta-containing layer 106extending over such segments.

Referring to FIG. 16, construction 100 is shown at a processing stagesubsequent to FIG. 15. Conductive material 108 has been formed overlayer 106 and within opening 104 to fill the remainder of the opening.The conductive 108 also extends over segments 110 of material 14.

FIG. 17 shows a processing stage subsequent to FIG. 16. Materials 106and 108 have been subjected to planarization (such as, for example,chemical-mechanical polishing) to remove materials 106 and 108 from oversegments 110 of insulative material 14, and to thereby form a planarizedupper surface 111. The materials 106 and 108 thus form a conductiveinterconnect extending upwardly from diffusion region 102 to the uppersurface 111.

Referring next to FIG. 18, such shows construction 100 at a processingstage subsequent to that of FIG. 15 in accordance with another aspect ofthe invention. Specifically, the material 106 has been removed from oversegments 110, but left within opening 104. Such removal can beaccomplished by, for example, chemical-mechanical polishing.

Referring next to FIG. 19, conductive material 108 is selectively formedon material 106 relative to insulative material 14. Such can beaccomplished by, for example, electroplating material 108 ontoconductive material 106. For instance, if material 106 consistsessentially of, or consists of tantalum/iridium, conductive material 108can comprise any metal which can be electroplated onto material 106;which can include, for example, one or more of copper, platinum,palladium, gold and silver in various aspects of the invention. Theconductive material 108 forms a conductive interconnect which cansubsequently be utilized for connecting electrically conductivecircuitry (not shown) with diffusion region 102.

FIGS. 20-24 show exemplary metal interconnects which can be formed inaccordance with aspects of the present invention. The numbering utilizedin FIGS. 20-24 is identical to that used in FIG. 4, where appropriate.

FIG. 20 shows a structure 150 comprising a metal layer 160 extendingwithin insulative material 14. The metal layer can correspond to anymetal level, including, for example, a Metal I level, a Metal II level,a Metal II, level, etc.; and can be generally referred to as a Metal Nlevel, where “N” is an integer. The metal layer 160 can comprise anysuitable metal, and in some aspects can comprise, consist essentiallyof, or consist of copper. In such aspects, the layer can be formedagainst a Ta/Ir barrier material (not shown) of the type describedpreviously in this disclosure.

An opening 154 extends through material 14 and to an upper surface ofmetal layer 160. The opening comprises a trench 156 extending in adirection orthogonal to the cross-sectional view of FIG. 20, and a via158 extending through the trench and connecting to layer 160. Theopening 154 is a typical opening utilized for damascene fabrication ofmetal layers associated with integrated circuitry, as will be recognizedby persons of ordinary skill in the art.

Referring to FIG. 21, the Ta/Ir material 20 discussed previously isformed over an upper surface of material 14 and within opening 154; andcopper-containing material 22 is formed over material 20. The processingutilized to form materials 20 and 22 can be identical to methodsdiscussed previously in this disclosure.

Referring to FIG. 22, materials 20 and 22 are polished from over theuppermost surface of material 14, and left within opening 154. Thepolishing can correspond to, for example, chemical-mechanical polishing.The materials 20 and 22 within the trench 156 of opening 154 form ametal line extending orthogonally to the line 160. The line 160 can be ametal line at a level “N”, and the line formed within trench 156 can beat the level “N+1”.

The structure of FIG. 22 has Ta/Ir material 20 at the interface betweenmaterial 22 and the conductive material of line 160. In some aspects, itcan be desired for the conductive material 22 to directly contact theconductive material of line 160. In such aspects, it can be desired toremove material 22 from the bottom of via 158 prior to forming material22 within the via. FIG. 23 shows construction 150 at a processing stagesubsequent to that of FIG. 20, and shows material 20 formed withinopening 154 and removed from the bottom of via 158. Such removal can beaccomplished by protecting portions of material 20 that are not at thebottom of via 158 with a protective mask (not shown), and thensubjecting the material 20 at the bottom of via 158 to any suitable etchwhich removes the material 20. The protective mask can then be removedto leave the structure of FIG. 23. Alternatively, the structure of FIG.23 can be formed by depositing material 20 in a manner which forms thematerial within trench 156, but not along the bottom of via 158. Anotherexemplary method of forming a structure having the FIG. 23 exposedmaterial 160 at the bottom of via 158 is to use an in situ sputter etch(using for example, metal ions or argon ions), post deposition of thematerial 20. The sputter etch can clear the material 20 from the bottomof the via while leaving the material along the sidewalls of the via 158and trench 156, and can be conducted without utilization of a protectivemask.

Referring to FIG. 24, construction 150 is shown after material 22 isprovided within opening 154, and after polishing to remove materials 20and 22 from over an uppermost surface material 14 (in other words, afterprocessing analogous to that discussed above with reference to FIGS. 21and 22). The construction of FIG. 24 has copper-containing material 22directly contacting the conductive material of line 160.

FIG. 25 shows an exemplary container-type metal-insulator-metalcapacitor which can be formed in accordance with aspects of the presentinvention. The capacitor is shown electrically connected with atransistor, and thus incorporated into a DRAM unit cell. The numberingutilized in FIG. 25 is identical to that utilized in FIG. 10.

The various devices described above can be utilized in numerous systems.For instance, FIG. 26 illustrates generally, by way of example but notby way of limitation, an embodiment of a computer system 400 accordingto an aspect of the present invention. Computer system 400 includes amonitor 401 or other communication output device, a keyboard 402 orother communication input device, and a motherboard 404. Motherboard 404can carry a microprocessor 406 or other data processing unit, and atleast one memory device 408. Memory device 408 can comprise variousaspects of the invention described above, including, for example, theDRAM unit cell of FIG. 10 and/or that of FIG. 25. Memory device 408 cancomprise an array of memory cells, and such array can be coupled withaddressing circuitry for accessing individual memory cells in the array.Further, the memory cell array can be coupled to a read circuit forreading data from the memory cells. The addressing and read circuitrycan be utilized for conveying information between memory device 408 andprocessor 406. Such is illustrated in the block diagram of themotherboard 404 shown in FIG. 27. In such block diagram, the addressingcircuitry is illustrated as 410 and the read circuitry is illustrated as412. Various components of computer system 400, including processor 406,can comprise one or more of the memory constructions describedpreviously in this disclosure.

Processor device 406 can correspond to a processor module, andassociated memory utilized with the module can comprise teachings of thepresent invention.

Memory device 408 can correspond to a memory module. For example, singlein-line memory modules (SIMMs) and dual in-line memory modules (DIMMs)may be used in the implementation which utilize the teachings of thepresent invention. The memory device can be incorporated into any of avariety of designs which provide different methods of reading from andwriting to memory cells of the device. One such method is the page modeoperation. Page mode operations in a DRAM are defined by the method ofaccessing a row of a memory cell arrays and randomly accessing differentcolumns of the array. Data stored at the row and column intersection canbe read and output while that column is accessed.

An alternate type of device is the extended data output (EDO) memorywhich allows data stored at a memory array address to be available asoutput after the addressed column has been closed. This memory canincrease some communication speeds by allowing shorter access signalswithout reducing the time in which memory output data is available on amemory bus. Other alternative types of devices include SDRAM, DDR SDRAM,SLDRAM, VRAM and Direct RDRAM, as well as others such as SRAM or Flashmemories.

Memory device 408 can comprise memory formed in accordance with one ormore aspects of the present invention described above with reference toFIGS. 1-22.

FIG. 28 illustrates a simplified block diagram of a high-levelorganization of various embodiments of an exemplary electronic system700 of the present invention. System 700 can correspond to, for example,a computer system, a process control system, or any other system thatemploys a processor and associated memory. Electronic system 700 hasfunctional elements, including a processor or arithmetic/logic unit(ALU) 702, a control unit 704, a memory device unit 706 and aninput/output (I/O) device 708. Generally, electronic system 700 willhave a native set of instructions that specify operations to beperformed on data by the processor 702 and other interactions betweenthe processor 702, the memory device unit 706 and the I/O devices 708.The control unit 704 coordinates all operations of the processor 702,the memory device 706 and the I/O devices 708 by continuously cyclingthrough a set of operations that cause instructions to be fetched fromthe memory device 706 and executed. In various embodiments, the memorydevice 706 includes, but is not limited to, random access memory (RAM)devices, read-only memory (ROM) devices, and peripheral devices such asa floppy disk drive and a compact disk CD-ROM drive. One of ordinaryskill in the art will understand, upon reading and comprehending thisdisclosure, that any of the illustrated electrical components arecapable of being fabricated to include memory constructions inaccordance with various aspects of the present invention.

FIG. 29 is a simplified block diagram of a high-level organization ofvarious embodiments of an exemplary electronic system 800. The system800 includes a memory device 802 that has an array of memory cells 804,address decoder 806, row access circuitry 808, column access circuitry810, read/write control circuitry 812 for controlling operations, andinput/output circuitry 814. The memory device 802 further includes powercircuitry 816, and sensors 820, such as current sensors for determiningwhether a memory cell is in a low-threshold conducting state or in ahigh-threshold non-conducting state. The illustrated power circuitry 816includes power supply circuitry 880, circuitry 882 for providing areference voltage, circuitry 884 for providing the first wordline withpulses, circuitry 886 for providing the second wordline with pulses, andcircuitry 888 for providing the bitline with pulses. The system 800 alsoincludes a processor 822, or memory controller for memory accessing.

The memory device 802 receives control signals from the processor 822over wiring or metallization lines. The memory device 802 is used tostore data which is accessed via I/O lines. It will be appreciated bythose skilled in the art that additional circuitry and control signalscan be provided, and that the memory device 802 has been simplified tohelp focus on the invention. At least one of the processor 822 or memorydevice 802 can include a memory construction of the type describedpreviously in this disclosure.

The various illustrated systems of this disclosure are intended toprovide a general understanding of various applications for thecircuitry and structures of the present invention, and are not intendedto serve as a complete description of all the elements and features ofan electronic system using memory cells in accordance with aspects ofthe present invention. One of the ordinary skill in the art willunderstand that the various electronic systems can be fabricated insingle-package processing units, or even on a single semiconductor chip,in order to reduce the communication time between the processor and thememory device(s).

Applications for memory cells and other structures of the presentinvention can include electronic systems for use in memory modules,device drivers, power modules, communication modems, processor modules,and application-specific modules, and may include multilayer, multichipmodules. Such circuitry can further be a subcomponent of a variety ofelectronic systems, such as a clock, a television, a cell phone, apersonal computer, an automobile, an industrial control system, anaircraft, and others.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A semiconductor construction comprising a composition containing Irand Ta.
 2. The construction of claim 1 wherein the composition consistsessentially of Ir and Ta.
 3. The construction of claim 2 wherein thecomposition contains the tantalum to a concentration of from about 40atomic percent to about 70 atomic percent.
 4. The construction of claim2 wherein the composition contains the tantalum to a concentration offrom about 50 atomic percent to about 65 atomic percent.
 5. Theconstruction of claim 1 wherein the composition is between acopper-containing material and an electrically insulative material. 6.The construction of claim 5 wherein the composition physically contactsthe copper-containing material and the electrically insulative material.7. The construction of claim 6 wherein the composition has a thicknessof from about 15 Å to about 50 Å between the copper-containing materialand the electrically insulative material.
 8. The construction of claim 1wherein the composition is between a platinum-containing material andconductively-doped silicon.
 9. The construction of claim 8 wherein thecomposition physically contacts the platinum-containing material and theconductively-doped silicon.
 10. The construction of claim 1 wherein thecomposition physically contacts a material containing one or moreelements selected from the group consisting of noble metals and nearnoble metals.
 11. The construction of claim 10 wherein the one orelements include one or more of gold, silver, platinum and palladium.12. A semiconductor construction, comprising: a semiconductor substrate;an electrically insulative material over the substrate; a compositioncontaining Ir and Ta over the electrically insulative material; and acopper-containing material over the composition.
 13. The construction ofclaim 12 wherein the composition has a thickness of from about 15 Å toabout 50 Å between the copper-containing material and the electricallyinsulative material.
 14. The construction of claim 12 wherein thecomposition consists essentially of Ir and Ta.
 15. The construction ofclaim 14 wherein the composition contains the tantalum to aconcentration of from about 40 atomic percent to about 70 atomicpercent.
 16. The construction of claim 14 wherein the compositioncontains the tantalum to a concentration of from about 50 atomic percentto about 65 atomic percent.
 17. The construction of claim 12 wherein thecomposition consists essentially of Ir and Ta; and wherein thecomposition directly contacts both the copper-containing material andthe electrically insulative material.
 18. The construction of claim 17wherein the electrically insulative material comprises one or more ofsilicon dioxide, BPSG and PSG.
 19. The construction of claim 18 whereinthe copper-containing material consists essentially of copper.
 20. Theconstruction of claim 12 wherein the copper-containing material is in ashape of one or more lines extending across a region of thesemiconductor substrate.
 21. The construction of claim 12 wherein theelectrically insulative material has one or more trenches therein,wherein the composition forms one or more liners within the one or moretrenches, and wherein the copper-containing material is within thetrenches and spaced from the electrically insulative material by onlythe one or more liners.
 22. The construction of claim 12 comprising anelectrically conductive line extending within the electricallyinsulative material, and further comprising: a trench within theelectrically insulative material and over the line: a via extending fromthe trench to the line; the composition being within the trench and thevia; and the copper-containing material being over the compositionwithin the trench and the via.
 23. The construction of claim 12comprising an electrically conductive line extending within theelectrically insulative material, and further comprising: a trenchwithin the electrically insulative material and over the line: a viaextending from the trench to the line, the via having a bottom along theline; the composition being within the trench but not along the bottomof the via; and the copper-containing material being over thecomposition within the trench and being in direct contact with the lineat the bottom of the via.
 24. The construction of claim 23 wherein theline comprises copper.
 25. A semiconductor construction, comprising: asemiconductor material; a first composition containing Ir and Ta overthe semiconductor material; and a second composition over the firstcomposition and comprising one or more of gold, silver, palladium andplatinum.
 26. The construction of claim 25 wherein the first compositionconsists essentially of Ir and Ta.
 27. The construction of claim 25wherein the first composition contains the tantalum to a concentrationof from about 40 atomic percent to about 70 atomic percent.
 28. Theconstruction of claim 25 wherein the first composition contains thetantalum to a concentration of from about 50 atomic percent to about 65atomic percent.
 29. The construction of claim 25 wherein the firstcomposition consists essentially of Ir and Ta; and wherein the firstcomposition directly contacts both the semiconductor material and thesecond composition.
 30. The construction of claim 29 wherein the secondcomposition is part of a capacitor electrode, and wherein thesemiconductor material consists essentially of conductively-dopedsilicon.
 31. The construction of claim 29 wherein the semiconductormaterial is monocrystalline silicon, and further comprising anelectrically insulative material over the monocrystalline silicon andhaving an opening extending therethrough to the monocrystalline silicon;wherein the first composition is along a bottom of the opening; andwherein the second composition is within the opening and over the firstcomposition.
 32. The construction of claim 31 wherein the secondcomposition fills the opening over the first composition. 33-44.(canceled)
 45. A method of forming a semiconductor construction,comprising: providing a semiconductor substrate having an electricallyinsulative material thereover; forming a composition containing Ir andTa over the electrically insulative material; and forming acopper-containing material over the composition.
 46. The method of claim45 wherein the composition consists essentially of Ir and Ta.
 47. Themethod of claim 46 wherein the composition contains the tantalum to aconcentration of from about 40 atomic percent to about 70 atomicpercent.
 48. The method of claim 46 wherein the composition contains thetantalum to a concentration of from about 50 atomic percent to about 65atomic percent.
 49. The method of claim 45 wherein: the composition isformed directly on the electrically insulative material; and wherein thecopper-containing material is formed directly on the composition. 50.The method of claim 49 wherein the forming the copper-containingmaterial comprises electroplating the copper-containing material ontothe composition.
 51. The method of claim 49 wherein the forming thecopper-containing material comprises forming a copper-containing seedlayer on the composition and then electroplating copper-containingplating onto the copper seed layer.
 52. The method of claim 45 whereinthe copper-containing material is formed to be one or more linesextending across a region of the semiconductor substrate.
 53. The methodof claim 45 wherein an electrically conductive line extends within theelectrically insulative material, and further comprising: forming atrench within the electrically insulative material and over the line:forming a via extending from the trench to the line; forming thecomposition within the trench and the via; and forming thecopper-containing material over the composition within the trench andthe via.
 54. The method of claim 45 wherein an electrically conductiveline extends within the electrically insulative material, and furthercomprising: forming a trench within the electrically insulative materialand over the line: forming a via extending from the trench to the line;forming the composition within the trench and the via; removing thecomposition from a bottom of the via to expose the line, but leaving thecomposition within the trench; and forming the copper-containingmaterial over the composition within the trench and in direct contactwith the line at the bottom of the via.
 55. The method of claim 45further comprising forming one or more trenches within the electricallyinsulative material, and wherein: the composition is formed within atleast one of the trenches as a liner; and the copper-containing materialis formed within said at least one of the trenches and over the liner.56. The method of claim 55 wherein the composition is initially formedwithin the at least one trench and over one or more segments of theelectrically insulative material proximate the at least one trench; andwherein the composition is subsequently removed from over the one ormore segments by chemical-mechanical polishing.
 57. The method of claim56 wherein the composition is removed from over the one or more segmentsafter the formation of the copper-containing material.
 58. The method ofclaim 56 wherein the composition is removed from over the one or moresegments prior to the formation of the copper-containing material.
 59. Amethod of forming a semiconductor construction, comprising: providing asemiconductor material; forming a first composition over thesemiconductor material, the first composition comprising Ta and Ir; andforming a second composition over the first composition, the secondcomposition comprising one or more of gold, silver, palladium andplatinum.
 60. The method of claim 59 wherein the first compositionconsists essentially of Ir and Ta.
 61. The method of claim 60 whereinthe first composition contains the tantalum to a concentration of fromabout 40 atomic percent to about 70 atomic percent.
 62. The method ofclaim 60 wherein the first composition contains the tantalum to aconcentration of from about 50 atomic percent to about 65 atomicpercent.
 63. The method of claim 60 wherein: the first compositionconsists essentially of Ir and Ta; the first composition is formeddirectly on the semiconductor material; and the second composition isformed directly on the first composition.
 64. The method of claim 63wherein the semiconductor material consists essentially ofconductively-doped silicon; wherein the second composition iselectrically conductive; and further comprising: forming a dielectricmaterial over the second composition; and forming a third compositionover the dielectric material, the third composition being electricallyconductive and being capacitively coupled with the second composition.65. The method of claim 63 wherein the semiconductor material ismonocrystalline silicon, and further comprising: forming an electricallyinsulative material over the monocrystalline silicon; forming an openingthrough the electrically insulative material to the monocrystallinesilicon; wherein the forming said first composition includes forming thefirst composition along a bottom of the opening; and wherein the formingsaid second composition includes forming the second composition withinthe opening and over the first composition.
 66. The method of claim 65wherein the first composition is initially formed within the opening andover a segment of the electrically insulative material proximate the atopening; and wherein the first composition is subsequently removed fromover the segment by chemical-mechanical polishing.
 67. The method ofclaim 66 wherein the first composition is removed from over the segmentafter the formation of the second composition.
 68. The method of claim66 wherein the first composition is removed from over the segment priorto the formation of the second composition.